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A Tale of Power Electronics: IGBT and Super Junction MOSFET


In the realm of power electronics, two key players have emerged as the driving force behind high-performance and efficient electronic devices: Insulated Gate Bipolar Transistor (IGBT) and Super Junction Metal-Oxide-Semiconductor Field-Effect Transistor (SJ-MOSFET). These semiconductor devices have revolutionized various industries, from electric vehicles and renewable energy systems to industrial automation and consumer electronics. In this blog, we will delve into the world of IGBT and SJ-MOSFET, exploring their structures, characteristics, and applications, as well as their impact on modern power electronics.

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IGBT: Power Meets Control

The Insulated Gate Bipolar Transistor (IGBT) stands as a remarkable combination of the best qualities of Bipolar Junction Transistors (BJTs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). It serves as a power switch that can handle high voltages and currents while offering the control and switching speed of a MOSFET.

Structure and Operation: IGBTs comprise three main regions: the N-doped emitter, the P-doped base, and the N-doped collector. The gate terminal, insulated by a thin oxide layer, allows control over the transistor’s conductivity. When a positive voltage is applied to the gate, it creates an inversion layer, enabling the flow of electrons from the collector to the emitter. This conduction path results in a low voltage drop across the device, making IGBTs highly efficient.

Key Features and Advantages:

  1. High Voltage Handling: IGBTs can handle high voltages (up to several kilovolts) and large currents, making them suitable for high-power applications.
  2. Low On-State Voltage Drop: The conduction losses in IGBTs are relatively low, leading to reduced power dissipation and increased efficiency.
  3. Fast Switching Speed: IGBTs offer a good compromise between the switching speed of MOSFETs and the current-carrying capacity of BJTs, making them ideal for applications requiring high-frequency switching.

Applications: IGBTs find extensive use in various fields, including:

  1. Motor Drives: IGBTs control the speed and torque of electric motors in appliances, industrial machinery, and electric vehicles.
  2. Renewable Energy: IGBTs enable efficient power conversion in solar inverters, wind turbines, and grid-tied systems.
  3. Industrial Automation: IGBTs are employed in motor control, variable speed drives, and power supplies for efficient energy management.
  4. Consumer Electronics: IGBTs are used in appliances like air conditioners, refrigerators, and washing machines for energy-efficient operation.

Super Junction MOSFET: Power in a Compact Form

The Super Junction Metal-Oxide-Semiconductor Field-Effect Transistor (SJ-MOSFET) has emerged as a game-changer in power electronics, offering improved performance and efficiency in a smaller package. SJ-MOSFETs optimize the trade-off between breakdown voltage, on-resistance, and switching speed.

Structure and Operation: The SJ-MOSFET structure consists of alternating P- and N-doped regions, forming a lattice-like pattern. This design allows for a larger active area, reducing the on-resistance and improving current-carrying capabilities. The gate electrode, separated by a thin oxide layer, controls the flow of electrons through the channel.

Key Features and Advantages:

  1. Low On-Resistance: SJ-MOSFETs exhibit low on-resistance, resulting in reduced power losses and improved efficiency.
  2. High Breakdown Voltage: These devices can withstand high voltages, making them suitable for applications requiring high voltage ratings.
  3. Fast Switching Speed: SJ-MOSFETs offer fast switching characteristics, allowing for efficient control and reduced switching losses.

Applications: SJ-MOSFETs are employed in a wide range of applications, including:

  1. Power Supplies: SJ-MOSFETs are used in AC-DC converters and DC-DC converters for efficient power delivery.
  2. LED Lighting: These devices enable high-efficiency LED drivers, ensuring optimal performance in lighting applications.
  3. Electric Vehicles: SJ-MOSFETs play a crucial role in motor control and power conversion systems, enhancing the performance of electric vehicles.
  4. Server and Telecom Power Systems: SJ-MOSFETs are utilized in high-power server supplies and telecom rectifiers to improve energy efficiency.


In the realm of power electronics, the Insulated Gate Bipolar Transistor (IGBT) and Super Junction Metal-Oxide-Semiconductor Field-Effect Transistor (SJ-MOSFET) have emerged as vital components. While IGBTs offer the perfect blend of power handling and control, SJ-MOSFETs provide high efficiency in a compact form. Together, these devices have revolutionized various industries, driving advancements in electric vehicles, renewable energy systems, industrial automation, and consumer electronics. As technology continues to evolve, IGBTs and SJ-MOSFETs will undoubtedly play an essential role in shaping the future of power electronics.

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Expert analysis, actionable insights, and strategic recommendations – the Electronics, Semiconductor, and ICT team at Persistence Market Research helps clients from all over the globe with their unique business intelligence needs. With a repository of over 500 reports on electronics, semiconductors, and ICT, of which, 100+ reports are specific for ICT, the team provides end-to-end research and analysis on regional trends, drivers for market growth, and research development efforts in the electronics, semiconductor, and ICT industry.

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